memristor

Time domain oscillating poles: stability redefined in memristor based Wien-oscillators

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Abdul Hafiz Talukdar, et al., "Time domain oscillating poles: stability redefined in memristor based Wien-oscillators." In 2010 International Conference on Microelectronics, 2010, 288. Traditionally, the necessary and sufficient condition for any system to be oscillating is that its poles are located on the imaginary (jω) axis. In this paper, for the first time, we have shown that systems can oscillate with time-domain oscillating poles. The idea is verified using a Memristor based Wien oscillator. Sustained oscillations are observed without having the poles of the system fixed on the

Generalized model for memristor-based Wien family oscillators

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Abdul Hafiz Talukdar, et al., "Generalized model for memristor-based Wien family oscillators." Microelectronics Journal 42 (9), 2011, 1032. In this paper, we report the unconventional characteristics of Memristor in Wien oscillators. Generalized mathematical models are developed to analyze four members of the Wien family using Memristors. Sustained oscillation is reported for all types though oscillating resistance and time dependent poles are present. We have also proposed an analytical model to estimate the desired amplitude of oscillation before the oscillation starts. These Memristor-based

Memristor-based reactance-less oscillator

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Mohamed Zidan, et al., "Memristor-based reactance-less oscillator." Electronics letters 47, (22) 2011, 1220. The first reactance-less oscillator is introduced. By using a memristor, the oscillator can be fully implemented on-chip without the need for any capacitors or inductors, which results in an area-efficient fully integrated solution. The concept of operation of the proposed oscillator is explained and detailed mathematical analysis is introduced. Closed-form expressions for the oscillation frequency and oscillation conditions are derived. Finally, the derived equations are verified with

Memristor-based relaxation oscillators using digital gates

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Moustafa A. Khatib, et al., "Memristor-based relaxation oscillators using digital gates." In 2012 Seventh International Conference on Computer Engineering & Systems (ICCES), 2012, 98. This paper presents two memristor-based relaxation oscillators. The proposed oscillators are designed without the need of any reactive elements, i.e., capacitor or inductor. As the "resistance storage" property of the memristor can be exploited to generate the oscillation. The proposed oscillators have the advantage that they can be fully integrated on-chip giving an area-efficient solution. Furthermore, these

Memristor-based mono-stable oscillator

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Bahgat, A. T., et al., "Memristor-based mono-stable oscillator." arXiv preprint , (2012). In this letter, a reactance-less mono-stable oscillator is introduced for the first time using memristors. By replacing bulky inductors and capacitors with memristors, the novel mono-stable oscillator can be an area-efficient solution for on-chip fully integrated systems. The proposed circuit is described, mathematically analysed and verified by circuit simulations.

Memristor: the illusive device

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Salama, Khaled Nabil. et al., "Memristor: the illusive device." In Proceedings of the great lakes symposium on VLSI, 2012, 208. The memristor (M) is considered to be the fourth two-terminal passive element in electronics, alongside the resistor (R), the capacitor (C), and the inductor (L). Its existence was postulated in 1971 but its first implementation was reported in 2008. Where was it hiding all that time and what can we do with it? Come and learn how the memristor completes the roster of electronic devices much like a missing particle that physicists seek to complete their tableaus.

Non linear dynamics of memristor based 3rd order oscillatory system

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Arka Talukdar, et al., "Non linear dynamics of memristor based 3rd order oscillatory system." Microelectronics journal 43 (3), 2012, 169. In this paper, we report for the first time the nonlinear dynamics of three memristor based phase shift oscillators, and consider them as a plausible solution for the realization of parametric oscillation as an autonomous linear time variant system. Sustained oscillation is reported through oscillating resistance while time dependent poles are present. The memristor based phase shift oscillator is explored further by varying the parameters so as to present

Improved Memristor-Based Relaxation Oscillator

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Ahmed G. Musad, et al., "Improved Memristor-Based Relaxation Oscillator" Microelectronics Journal Volume 44, (9), 2013, 814. Abstract: This paper presents an improved memristor-based relaxation oscillator which offers higher frequency and wider tunning range than the existing reactance-less oscillators. It also has the capability of operating on two positive supplies or alternatively a positive and negative supply. Furthermore, it has the advantage that it can be fully integrated on-chip providing an area-efficient solution. On the other hand, The oscillation concept is discussed then a

Memristor-based memory The sneak paths problem and solutions

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Mohammed A. Zidan, et al., "Memristor-based memory The sneak paths problem and solutions" Microelectronics Journal 44, (2), 2013, 176. Abstract: In this paper, we investigate the read operation of memristor-based memories. We analyze the sneak paths problem and provide a noise margin metric to compare the various solutions proposed in the literature. We also analyze the power consumption associated with these solutions. Moreover, we study the effect of the aspect ratio of the memory array on the sneak paths. Finally, we introduce a new technique for solving the sneak paths problem by gating

Mohammed Zidan awarded IEEE Circuits and Systems Society Pre-Doctoral Fellowship

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Mohammed Affan Zidan, sensors lab member and Ph.D. candidate in the Electrical Engineering (EE) Program at the Computer, Electrical, and Mathematical Science and Engineering (CEMSE) Division, received the IEEE Circuits and Systems (CAS) Society Pre-Doctoral Fellowship.

Statistical Analysis for Memristor Crossbar Memories

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Rawan Naous, et al., "Statistical Analysis for Memristor Crossbar Memories." Int. Journal of Unconventional Computing 12, 2016, 251. The inherent memory capabilities bound with compactness and scalability features pose the memristor as an ideal rival for conventional nonvolatile memories. Its use within a crossbar structure offers high-density storage and tight dimensionality. A fitting parameter in the midst of the trend towards nanoscale integration, where gateless memories are on the rise in an attempt to achieve further space savings. Nonetheless, the gate sacrifice comes at the expense of

Memristor-based neural networks: Synaptic versus neuronal stochasticity

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Rawan Naous, et al., "Memristor-based neural networks: Synaptic versus neuronal stochasticity." Aip Advances 6, (11), 2016, 111304. In neuromorphic circuits, stochasticity in the cortex can be mapped into the synaptic or neuronal components. The hardware emulation of these stochastic neural networks are currently being extensively studied using resistive memories or memristors. The ionic process involved in the underlying switching behavior of the memristive elements is considered as the main source of stochasticity of its operation. Building on its inherent variability, the memristor is

Single-readout high-density memristor crossbar

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Mohammed A. Zidan, et al., "Single-readout high-density memristor crossbar." Scientific reports 6, 2016, 18863. High-density memristor-crossbar architecture is a very promising technology for future computing systems. The simplicity of the gateless-crossbar structure is both its principal advantage and the source of undesired sneak-paths of current. This parasitic current could consume an enormous amount of energy and ruin the readout process. We introduce new adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer-memory system to address the

Mohammed Affan Zidan

Mohammed Affan Zidan obtained his Ph.D. Degree in the Electrical Engineering (EE) Program from King Abdullah University of Science and Technology, under the supervision of Prof. Khaled Nabil Salama. Mohammed Zidan earned his M.Sc. in Electronics and Communications Engineering from Faculty of Engineering, Cairo University, Egypt in 2010, where he was ranked first. In 2006, he received his B.Sc. in Electronics and Communications Engineering, Institute of Aviation Engineering and Technology (IAET), Egypt, also ranking first. Before joining KAUST, he worked as a teaching assistant at the German

Lama Alshammari

Lama Alshammari is currently a Visiting Student at SAMA lab. she received her BSc from AL Faisal University in Electrical Engineering, Riyadh, in 2023. She worked as a visiting student at Electronics and Photonics lab, KACST, Riyadh, in 2021. She has previously received AL Faisal Boeing award. Her research interests include 3D printing smart memory devices.

Dayanand Kumar

Postdoctoral Research Fellow, Electrical and Computer Engineering
Dr. Kumar is currently working as a postdoctoral fellow at SAMA lab. He received his M. Tech. from Indian Institute of Technology (IIT), Varanasi, India, in 2012, and his Ph.D. from National Chiao Tung University (NCTU), Taiwan, in 2018. He was awarded by the President of Taiwan for outstanding academic research performance during his Ph.D. in 2016. After his Ph.D., he worked as a Principal Integration Engineer (PIE) in Micron Technology, Taiwan, from 2018 to 2019. Then he moved to Nanyang Technological University (NTU), Singapore, as a postdoctoral research fellow. Later he joined NCTU