MOCVD

Blue LED material extended to Green, Yellow, and now Red

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KAUST

In this seminar, the science of MOCVD, the material science of InGaN, and the new-born InGaN-based red LED performance will be discussed. The three primary colors in light are RGB. Green and blue LEDs have been realized by using InGaN active region. The current red LEDs are based on AlGaAs or InGaP as the active region. If we can realize red LEDs by InGaN, it is possible to integrate RGB LEDs in a wafer. Such RGB integration is a breakthrough to develop the next displays, so-called, micro-LED displays that are the next after the OLED displays, and functional LED lightings.

Special Speaker Prof. Elhadj Dogheche from Institute of Electronic Microelectronic & Nanotechnology IEMN CNRS, University of Valenciennes France.

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It was our honor to have the special speaker Prof. Elhadj Dogheche from Institute of Electronic Microelectronic and Nanotechnology IEMN CNRS, University of Valenciennes France to give us a presentation on New Generation on Gallium Nitride based High Speed Photonic Devices in the 216th Journal Club Meeting.​​

Kuang-Hui and Hamad filed a U.S. patent application on their ground-breaking MOCVD technologies!

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Kuang-Hui and Hamad filed a U.S. patent application on their ground-breaking MOCVD technologies!

Kuang-Hui and Hamad filed the second U.S. patent application on their ground-breaking MOCVD technologies!

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Kuang-Hui and Hamad filed the second U.S. patent application on their ground-breaking MOCVD technologies!

Kuang-Hui delivered two contributed talks on extremely high-temperature MOCVD reactors at OMVPE Conference in Santa Fe, USA!

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Kuang-Hui delivered two contributed talks on extremely high-temperature MOCVD reactors at OMVPE Conference in Santa Fe, USA!

Kuang-Hui's paper on extremely high temperature MOCVD gets accepted by Journal of Crystal Growth!

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Kuang-Hui's paper on extremely high-temperature MOCVD gets accepted by the Journal of Crystal Growth!

Haiding's paper on MOCVD growth of three phrases gets accepted by Crystal Growth & Design!

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Haiding's paper on MOCVD growth of three phrases gets accepted by Crystal Growth & Design!

Haiding Sun

Postdoctoral Research Fellow, Advanced Semiconductor Laboratory
Haiding Sun was a Postdoctoral Research Fellow working with Professor Xiaohang Li at the Advanced Semiconductor Laboratory at King Abdullah University of Science and Technology (KAUST). Education and Early Career Dr. Sun received his Ph.D. in Electrical Engineering from Boston University, Massachusetts, in the United States in 2015. His Ph.D. dissertation title was “Development of Aluminum Gallium Nitride-Based Emitters In The Form of Graded-Index Separate Confinement Heterostructure (GRINSCH)." Research Interests Dr. Sun ’s research works cover various aspects of semiconductor device designs