silicon

Double honors for Professor Yating Wan

3 min read · Thu, Feb 13 2025

photonic silicon-based photodetectors silicon IEEE

KAUST Professor Yating Wan receives the 2025 Sony Women in Technology and IEEE Young Investigator Awards.

Thin PZT‐based ferroelectric capacitors on flexible silicon for nonvolatile memory applications

1 min read · Sun, Apr 26 2015

Thin PZT‐based ferroelectric capacitors silicon memory applications

Mohamed T. Ghoneim, et al., "Thin PZT‐based ferroelectric capacitors on flexible silicon for nonvolatile memory applications." Advanced Electronic Materials 1 (6), 2015, 1500045. A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)‐(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol‐gel coating cycles required (i.e., more cost‐effective), and, fabrication wise, is more suitable for further scaling