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High-Mobility Back-End-of-Line Compatible Indium Oxide Thin-Film Transistors for Monolithic 3D Integration
Na Xiao, Ph.D. Student, Electrical and Computer Engineering
May 6, 16:00
-
18:00
B2 L5 R5209
advanced semiconductors
thin-film transistors
This dissertation develops strategies for fabricating high-performance, low-temperature processed indium oxide thin-film transistors for monolithic 3D integration, achieving record mobility and stability through optimized annealing, passivation, and channel engineering techniques.
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Mon, Feb 8 2016
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thin-film transistors
electronics
We would like to welcome to Prof. Ioannis Kymissis and Lawrence L. Wald to the King Abdullah University of Science and Technology.
Na Xiao
Ph.D. Student,
Electrical and Computer Engineering
advanced semiconductors
thin-film transistors
Na Xiao's research focuses on developing high-mobility back-end-of-line (BEOL) compatible indium oxide (In2O3) thin-film transistors (TFTs) for monolithic 3D integration (M3DI).
